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Infineon Technologies IRF9388PBF
MOSFET P-CH 30V 12A 8SO
Manufacturer # :IRF9388PBF
Manufacturer :Infineon Technologies
Dasenic # :B0DDD9-DS
Datasheet :
IRF9388PBF Datasheet
IRF9388PBF DatasheetSample :
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Description : MOSFET P-CH 30V 12A 8SO 8-SOIC (0.154", 3.90mm Width) Tube
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| Quantity | Unit Price | Total |
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In Stock: 2006
MOQ :1 PCS
Packaging :8-SOIC (0.154", 3.90mm Width) Tube
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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Unit Price : $ 0
Total :$ 0.00
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-SO
- Power Dissipation ( Max):2.5W (Ta)
- F E T Type:P-Channel
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:12A (Ta)
- Rds On ( Max) @ Id, Vgs:8.5mOhm @ 12A, 20V
- Vgs(th) ( Max) @ Id:2.4V @ 25µA
- Gate Charge ( Qg) ( Max) @ Vgs:52 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1680 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):10V, 20V
- Vgs ( Max):±25V
- Series:HEXFET®
- Packaging:Tube
