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Infineon Technologies IRF7353D1PBF
MOSFET N-CH 30V 6.5A 8SO
Manufacturer # :IRF7353D1PBF
Manufacturer :Infineon Technologies
Dasenic # :01E6E6-DS
Datasheet :
IRF7353D1PBF Datasheet
IRF7353D1PBF DatasheetSample :
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Description : MOSFET N-CH 30V 6.5A 8SO 8-SOIC (0.154", 3.90mm Width) Tube
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| Quantity | Unit Price | Total |
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In Stock: 72
MOQ :1 PCS
Packaging :8-SOIC (0.154", 3.90mm Width) Tube
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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Unit Price : $ 0
Total :$ 0.00
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-SO
- Power Dissipation ( Max):2W (Ta)
- F E T Type:N-Channel
- F E T Feature:Schottky Diode (Isolated)
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:6.5A (Ta)
- Rds On ( Max) @ Id, Vgs:32mOhm @ 5.8A, 10V
- Vgs(th) ( Max) @ Id:1V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:33 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:650 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- Series:FETKY™
- Packaging:Tube
