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Infineon Technologies IRF6614
MOSFET N-CH 40V 12.7A DIRECTFET
Manufacturer # :IRF6614
Manufacturer :Infineon Technologies
Dasenic # :98A0D6-DS
Datasheet :
IRF6614 Datasheet
IRF6614 DatasheetSample :
Customer # :
Description : MOSFET N-CH 40V 12.7A DIRECTFET DirectFET™ Isometric ST Tape & Reel (TR)
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 3.443900 | $ 34.44 |
| 4800+ | $ 1.913300 | $ 9183.84 |
| 9600+ | $ 1.850000 | $ 17760 |
In Stock: 1894
MOQ :1 PCS
Packaging :DirectFET™ Isometric ST Tape & Reel (TR)
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 3.4439
Total :$ 3.44
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Obsolete
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:DIRECTFET™ ST
- Power Dissipation ( Max):2.1W (Ta), 42W (Tc)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):40 V
- Current - Continuous Drain ( Id) @ 25° C:12.7A (Ta), 55A (Tc)
- Rds On ( Max) @ Id, Vgs:8.3mOhm @ 12.7A, 10V
- Vgs(th) ( Max) @ Id:2.25V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:29 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2560 pF @ 20 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- Series:HEXFET®
