Images are for reference only.
1 : $1.2240
First-time registration with orders over $2,000 receives a $100 coupon. Register Now !
Infineon Technologies IPD80R1K4CEATMA1
MOSFET N-CH 800V 3.9A TO252-3
Manufacturer # :IPD80R1K4CEATMA1
Manufacturer :Infineon Technologies
Dasenic # :B3CBB4-DS
Datasheet :
IPD80R1K4CEATMA1 Datasheet
IPD80R1K4CEATMA1 DatasheetSample :
Customer # :
Description : MOSFET N-CH 800V 3.9A TO252-3 TO-252-3, DPak (2 Leads + Tab), SC-63
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.224000 | $ 1.22 |
| 10+ | $ 0.945000 | $ 9.45 |
| 100+ | $ 0.765900 | $ 76.59 |
| 500+ | $ 0.662400 | $ 331.2 |
| 1000+ | $ 0.540000 | $ 540 |
In Stock: 7470
MOQ :1 PCS
Packaging :TO-252-3, DPak (2 Leads + Tab), SC-63
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 1.224
Total :$ 1.22
Delivery : 
Payment :
Help you to save your cost and time.
Strict quality inspection and Reliable package for goods.
Fast Reliable delivery to save time.
Provide 365 days warranty after-sales service
- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PG-TO252-3
- Power Dissipation ( Max):63W (Tc)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):800 V
- Current - Continuous Drain ( Id) @ 25° C:3.9A (Tc)
- Rds On ( Max) @ Id, Vgs:1.4Ohm @ 2.3A, 10V
- Vgs(th) ( Max) @ Id:3.9V @ 240µA
- Gate Charge ( Qg) ( Max) @ Vgs:23 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:570 pF @ 100 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
