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Infineon Technologies IPD50N06S4L12ATMA1
MOSFET N-CH 60V 50A TO252-3-11![part number has RoHS](/img/RoHS2.png)
Manufacturer # :IPD50N06S4L12ATMA1
Manufacturer :Infineon Technologies
Dasenic # :D8B61D-DS
Datasheet :
IPD50N06S4L12ATMA1 Datasheet
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Description : MOSFET N-CH 60V 50A TO252-3-11 TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®
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Quantity | Unit Price | Total |
1+ | $ 0.266200 | $ 0.27 |
25+ | $ 0.260900 | $ 6.52 |
100+ | $ 0.250300 | $ 25.03 |
500+ | $ 0.239600 | $ 119.8 |
1000+ | $ 0.226300 | $ 226.3 |
In Stock: 1751
MOQ :1 PCS
Packaging :TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.2662
Total :$ 0.27
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PG-TO252-3-11
- Power Dissipation ( Max):50W (Tc)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):60 V
- Current - Continuous Drain ( Id) @ 25° C:50A (Tc)
- Rds On ( Max) @ Id, Vgs:12mOhm @ 50A, 10V
- Vgs(th) ( Max) @ Id:2.2V @ 20µA
- Gate Charge ( Qg) ( Max) @ Vgs:40 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2890 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±16V
- Series:OptiMOS™
- Base Product Number:IPD50
- Packaging:Dasenic-Reel®
- Packaging:Cut Tape (CT)
- Packaging:Tape & Reel (TR)