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Infineon Technologies IPB80N08S207ATMA1
MOSFET N-CH 75V 80A TO263-3
Manufacturer # :IPB80N08S207ATMA1
Manufacturer :Infineon Technologies
Dasenic # :D54F3D-DS
Datasheet :
IPB80N08S207ATMA1 Datasheet
IPB80N08S207ATMA1 DatasheetSample :
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Description : MOSFET N-CH 75V 80A TO263-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®
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| Quantity | Unit Price | Total |
| 1+ | $ 0.504900 | $ 0.5 |
| 10+ | $ 0.504900 | $ 5.05 |
| 25+ | $ 0.504900 | $ 12.62 |
| 50+ | $ 0.504900 | $ 25.25 |
| 100+ | $ 0.504900 | $ 50.49 |
In Stock: 6000
MOQ :1 PCS
Packaging :TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.5049
Total :$ 0.50
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PG-TO263-3-2
- Power Dissipation ( Max):300W (Tc)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):75 V
- Current - Continuous Drain ( Id) @ 25° C:80A (Tc)
- Rds On ( Max) @ Id, Vgs:7.1mOhm @ 80A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:180 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:4700 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- Series:OptiMOS™
- Base Product Number:IPB80N
- Packaging:Dasenic-Reel®
- Packaging:Cut Tape (CT)
- Packaging:Tape & Reel (TR)
