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IPB80N06S2L11ATMA1
MOSFET N-CH 55V 80A TO263-3![part number has RoHS](/img/RoHS2.png)
Dasenic Part Number : 0AF967-DS
Manufacturer :Infineon Technologies
Manufacturer Part # : IPB80N06S2L11ATMA1
Datasheet :
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Quantity | Unit Price | Total |
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In Stock: 2968
MOQ : 1 PCS
Packaging :TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Tape & Reel (TR)
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PG-TO263-3-2
- Power Dissipation ( Max):158W (Tc)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):55 V
- Current - Continuous Drain ( Id) @ 25° C:80A (Tc)
- Rds On ( Max) @ Id, Vgs:10.7mOhm @ 60A, 10V
- Vgs(th) ( Max) @ Id:2V @ 93µA
- Gate Charge ( Qg) ( Max) @ Vgs:80 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2075 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- Series:OptiMOS™
- Base Product Number:IPB80N
- Packaging:Tape & Reel (TR)