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Infineon Technologies IPB320N20N3GATMA1
MOSFET N-CH 200V 34A D2PAK
Manufacturer # :IPB320N20N3GATMA1
Manufacturer :Infineon Technologies
Dasenic # :82D020-DS
Datasheet :
IPB320N20N3GATMA1 Datasheet
IPB320N20N3GATMA1 DatasheetSample :
Customer # :
Description : MOSFET N-CH 200V 34A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 2.424500 | $ 24.25 |
| 1000+ | $ 1.616300 | $ 1616.3 |
| 2000+ | $ 1.521900 | $ 3043.8 |
| 5000+ | $ 1.460100 | $ 7300.5 |
In Stock: 36000
MOQ :1 PCS
Packaging :TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 2.4245
Total :$ 2.42
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PG-TO263-3
- Power Dissipation ( Max):136W (Tc)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):200 V
- Current - Continuous Drain ( Id) @ 25° C:34A (Tc)
- Rds On ( Max) @ Id, Vgs:32mOhm @ 34A, 10V
- Vgs(th) ( Max) @ Id:4V @ 90µA
- Gate Charge ( Qg) ( Max) @ Vgs:29 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2350 pF @ 100 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
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