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Infineon Technologies IPB017N06N3GATMA1
MOSFET N-CH 60V 180A TO263-7
Manufacturer # :IPB017N06N3GATMA1
Manufacturer :Infineon Technologies
Dasenic # :6C4A17-DS
Datasheet :
IPB017N06N3GATMA1 Datasheet
IPB017N06N3GATMA1 DatasheetSample :
Customer # :
Description : MOSFET N-CH 60V 180A TO263-7 TO-263-7, D²Pak (6 Leads + Tab)
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 2.235200 | $ 22.35 |
| 1000+ | $ 1.490100 | $ 1490.1 |
| 2000+ | $ 1.420100 | $ 2840.2 |
| 5000+ | $ 1.347600 | $ 6738 |
In Stock: 9000
MOQ :1 PCS
Packaging :TO-263-7, D²Pak (6 Leads + Tab)
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 2.2352
Total :$ 2.24
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PG-TO263-7
- Power Dissipation ( Max):250W (Tc)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):60 V
- Current - Continuous Drain ( Id) @ 25° C:180A (Tc)
- Rds On ( Max) @ Id, Vgs:1.7mOhm @ 100A, 10V
- Vgs(th) ( Max) @ Id:4V @ 196µA
- Gate Charge ( Qg) ( Max) @ Vgs:275 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:23000 pF @ 30 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
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