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Infineon Technologies IHD10N60RA
IGBT 600V 20A 110W TO252-3
Manufacturer # :IHD10N60RA
Manufacturer :Infineon Technologies
Dasenic # :AA4C95-DS
Datasheet :
IHD10N60RA Datasheet
IHD10N60RA DatasheetSample :
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Description : IGBT 600V 20A 110W TO252-3 TO-252-3, DPak (2 Leads + Tab), SC-63
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| Quantity | Unit Price | Total |
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In Stock: 66
MOQ :1 PCS
Packaging :TO-252-3, DPak (2 Leads + Tab), SC-63
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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- Category:Discrete Semiconductor Devices/Insulated Gate Bipolar Transistors (IGBTs)
- Product Status:Obsolete
- Operating Temperature:-40°C ~ 175°C (TJ)
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Input Type:Standard
- Power - Max:110 W
- Supplier Device Package:PG-TO252-3-11
- Current - Collector ( Ic) ( Max):20 A
- Voltage - Collector Emitter Breakdown ( Max):600 V
- I G B T Type:Trench
- Vce(on) ( Max) @ Vge, Ic:1.9V @ 15V, 10A
- Current - Collector Pulsed ( Icm):30 A
- Switching Energy:270µJ
- Gate Charge:62 nC
- Td (on/off) @ 25° C:-/170ns
- Test Condition:400V, 10A, 23Ohm, 15V
