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Infineon Technologies BSS806NEH6327XTSA1
MOSFET N-CH 20V 2.3A SOT23-3
Manufacturer # :BSS806NEH6327XTSA1
Manufacturer :Infineon Technologies
Dasenic # :93A92E-DS
Datasheet :
BSS806NEH6327XTSA1 Datasheet
BSS806NEH6327XTSA1 DatasheetSample :
Customer # :
Description : MOSFET N-CH 20V 2.3A SOT23-3 TO-236-3, SC-59, SOT-23-3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.076900 | $ 0.77 |
| 3000+ | $ 0.042700 | $ 128.1 |
| 6000+ | $ 0.041900 | $ 251.4 |
| 12000+ | $ 0.041200 | $ 494.4 |
| 18000+ | $ 0.040500 | $ 729 |
In Stock: 41392
MOQ :1 PCS
Packaging :TO-236-3, SC-59, SOT-23-3
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.0769
Total :$ 0.08
Delivery : 
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PG-SOT23
- Power Dissipation ( Max):500mW (Ta)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:2.3A (Ta)
- Rds On ( Max) @ Id, Vgs:57mOhm @ 2.3A, 2.5V
- Vgs(th) ( Max) @ Id:0.75V @ 11µA
- Gate Charge ( Qg) ( Max) @ Vgs:1.7 nC @ 2.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:529 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 2.5V
- Vgs ( Max):±8V
