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1 : $1.2175
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Infineon Technologies BSO612CV
MOSFET N/P-CH 60V 3A/2A 8SOIC
Manufacturer # :BSO612CV
Manufacturer :Infineon Technologies
Dasenic # :5E087D-DS
Datasheet :
BSO612CV Datasheet
BSO612CV DatasheetSample :
Customer # :
Description : MOSFET N/P-CH 60V 3A/2A 8SOIC 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Cut Tape (CT)
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 1.217500 | $ 12.18 |
| 2500+ | $ 0.676400 | $ 1691 |
| 5000+ | $ 0.640800 | $ 3204 |
| 12500+ | $ 0.593400 | $ 7417.5 |
| 25000+ | $ 0.587500 | $ 14687.5 |
In Stock: 1529
MOQ :1 PCS
Packaging :8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Cut Tape (CT)
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 1.2175
Total :$ 1.22
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/FETs, MOSFETs
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Technology:MOSFET (Metal Oxide)
- Power - Max:2W
- Supplier Device Package:PG-DSO-8
- Configuration:N and P-Channel
- Drain to Source Voltage ( Vdss):60V
- Current - Continuous Drain ( Id) @ 25° C:3A, 2A
- Rds On ( Max) @ Id, Vgs:120mOhm @ 3A, 10V
- Vgs(th) ( Max) @ Id:4V @ 20µA
- Gate Charge ( Qg) ( Max) @ Vgs:15.5nC @ 10V
- Input Capacitance ( Ciss) ( Max) @ Vds:340pF @ 25V
- Series:SIPMOS®
- Base Product Number:BSO612
