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Infineon Technologies BSM10GD120DN2E3224BOSA1
Manufacturer # :BSM10GD120DN2E3224BOSA1
Manufacturer :Infineon Technologies
Dasenic # :95F99F-DS
Datasheet : BSM10GD120DN2E3224BOSA1 Datasheet
Sample :
Customer # :
Description : IGBT MODULE 1200V 15A 80W Module
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In Stock: 6816
MOQ :1 PCS
Packaging :Module
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 52.047
Total :$ 52.05
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- Category:Discrete Semiconductor Devices/IGBT Modules
- Operating Temperature:150°C (TJ)
- Mounting Type:Chassis Mount
- Package / Case:Module
- Power - Max:80 W
- Supplier Device Package:Module
- Configuration:Full Bridge
- Input:Standard
- Current - Collector ( Ic) ( Max):15 A
- Voltage - Collector Emitter Breakdown ( Max):1200 V
- Current - Collector Cutoff ( Max):400 µA
- Vce(on) ( Max) @ Vge, Ic:3.2V @ 15V, 10A
- Input Capacitance ( Cies) @ Vce:530 pF @ 25 V
- N T C Thermistor:No