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1 : $1.0773
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Goford Semiconductor GC11N65T
N650V,RD(MAX)<360M@10V,VTH2.5V~4
Manufacturer # :GC11N65T
Manufacturer :Goford Semiconductor
Dasenic # :09E789-DS
Datasheet :
GC11N65T Datasheet
GC11N65T DatasheetSample :
Customer # :
Description : N650V,RD(MAX)<360M@10V,VTH2.5V~4 TO-220-3 Tube
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 1.077300 | $ 10.77 |
| 1000+ | $ 0.718200 | $ 718.2 |
| 5000+ | $ 0.684000 | $ 3420 |
| 15000+ | $ 0.662400 | $ 9936 |
| 30000+ | $ 0.596700 | $ 17901 |
In Stock: 12000
MOQ :1 PCS
Packaging :TO-220-3 Tube
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 1.0773
Total :$ 1.08
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-220
- Power Dissipation ( Max):78W (Tc)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):650 V
- Current - Continuous Drain ( Id) @ 25° C:11A (Tc)
- Rds On ( Max) @ Id, Vgs:360mOhm @ 5.5A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:21 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:901 pF @ 50 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- Packaging:Tube
