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Goford Semiconductor G01N20LE
N200V,RD(MAX)<850M@10V,RD(MAX)<9![part number has RoHS](/img/RoHS2.png)
Manufacturer # :G01N20LE
Manufacturer :Goford Semiconductor
Dasenic # :69BA04-DS
Datasheet :
G01N20LE Datasheet
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Description : N200V,RD(MAX)<850M@10V,RD(MAX)<9 TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR)
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In Stock: 7868
MOQ :1 PCS
Packaging :TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR)
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SOT-23-3
- Power Dissipation ( Max):1.5W (Tc)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):200 V
- Current - Continuous Drain ( Id) @ 25° C:1.7A (Tc)
- Rds On ( Max) @ Id, Vgs:850mOhm @ 1.7A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:12 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:580 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V