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GeneSiC Semiconductor MURTA60020R
DIODE MODULE 200V 300A 3TOWER
MURTA60020R Datasheet| Quantity | Unit Price | Total |
| 48+ | $ 376.260000 | $ 18060.48 |
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- Category:Discrete Semiconductor Devices/Diode Arrays
- Product Status:Active
- Mounting Type:Chassis Mount
- Package / Case:Three Tower
- Technology:Standard
- Supplier Device Package:Three Tower
- Speed:Fast Recovery =< 500ns, > 200mA (Io)
- Voltage - Forward ( Vf) ( Max) @ If:1.3 V @ 300 A
- Current - Reverse Leakage @ Vr:25 µA @ 50 V
- Diode Configuration:1 Pair Common Anode
- Voltage - D C Reverse ( Vr) ( Max):200 V
- Current - Average Rectified ( Io) (per Diode):300A
- Reverse Recovery Time (trr):200 ns
- Operating Temperature - Junction:-55°C ~ 150°C
- Base Product Number:MURTA60020
- Packaging:Bulk
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