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Diodes Incorporated MMBTA05-7-F
60V 300mW 100@100mA,1V 500mA NPN SOT-23-3 Bipolar Transistors - BJT
Manufacturer # :MMBTA05-7-F
Manufacturer :Diodes Incorporated
Dasenic # :A152E1-DS
Datasheet :
MMBTA05-7-F Datasheet
MMBTA05-7-F DatasheetSample :
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Description : 60V 300mW 100@100mA,1V 500mA NPN SOT-23-3 Bipolar Transistors - BJT SOT-23-3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.037200 | $ 0.37 |
| 15000+ | $ 0.018600 | $ 279 |
| 30000+ | $ 0.018400 | $ 552 |
| 45000+ | $ 0.018200 | $ 819 |
| 75000+ | $ 0.017900 | $ 1342.5 |
In Stock: 21179
MOQ :1 PCS
Packaging :SOT-23-3
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.0372
Total :$ 0.04
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- Category:Discrete Semiconductor Devices/Single, Pre-Biased Bipolar Transistors
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Power - Max:300 mW
- Supplier Device Package:SOT-23-3
- Transistor Type:NPN
- Current - Collector ( Ic) ( Max):500 mA
- Voltage - Collector Emitter Breakdown ( Max):60 V
- Vce Saturation ( Max) @ Ib, Ic:250mV @ 10mA, 100mA
- Current - Collector Cutoff ( Max):100nA
- D C Current Gain (h F E) ( Min) @ Ic, Vce:100 @ 100mA, 1V
- Frequency - Transition:100MHz
