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Diodes Incorporated DXTN5820DFDB-7
SS LOW SAT TRANSISTOR U-DFN2020-![part number has RoHS](/img/RoHS2.png)
Manufacturer # :DXTN5820DFDB-7
Manufacturer :Diodes Incorporated
Dasenic # :721E91-DS
Datasheet :
DXTN5820DFDB-7 Datasheet
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Description : SS LOW SAT TRANSISTOR U-DFN2020- - Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®
Pricing (USD) : *To apply for a price, please click the Send Target Price button
Quantity | Unit Price | Total |
10+ | $ 0.327800 | $ 3.28 |
3000+ | $ 0.182100 | $ 546.3 |
In Stock: 9000
MOQ :1 PCS
Packaging :- Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.3278
Total :$ 0.33
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- Category:Discrete Semiconductor Devices/Single, Pre-Biased Bipolar Transistors
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:3-UDFN Exposed Pad
- Power - Max:690 mW
- Supplier Device Package:U-DFN2020-3 (Type B)
- Transistor Type:NPN
- Current - Collector ( Ic) ( Max):6 A
- Voltage - Collector Emitter Breakdown ( Max):20 V
- Vce Saturation ( Max) @ Ib, Ic:275mV @ 300mA, 6A
- Current - Collector Cutoff ( Max):100nA
- D C Current Gain (h F E) ( Min) @ Ic, Vce:280 @ 500mA, 2V
- Frequency - Transition:80MHz
- Packaging:Tape & Reel (TR)
- Packaging:Cut Tape (CT)
- Packaging:Dasenic-Reel®