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Diodes Incorporated DMT8012LFG-7
MOSFET N-CH 80V PWRDI3333
Manufacturer # :DMT8012LFG-7
Manufacturer :Diodes Incorporated
Dasenic # :29B0CC-DS
Datasheet :
DMT8012LFG-7 Datasheet
DMT8012LFG-7 DatasheetSample :
Customer # :
Description : MOSFET N-CH 80V PWRDI3333 8-PowerVDFN
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.461000 | $ 4.61 |
| 2000+ | $ 0.307300 | $ 614.6 |
| 4000+ | $ 0.299600 | $ 1198.4 |
| 6000+ | $ 0.297800 | $ 1786.8 |
| 10000+ | $ 0.294500 | $ 2945 |
In Stock: 38400
MOQ :1 PCS
Packaging :8-PowerVDFN
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.461
Total :$ 0.46
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Payment :
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Package / Case:8-PowerVDFN
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerDI3333-8
- Power Dissipation ( Max):2.2W (Ta), 30W (Tc)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):80 V
- Current - Continuous Drain ( Id) @ 25° C:9.5A (Ta), 35A (Tc)
- Rds On ( Max) @ Id, Vgs:16mOhm @ 12A, 10V
- Vgs(th) ( Max) @ Id:3V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:34 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1949 pF @ 40 V
- Drive Voltage ( Max Rds On, Min Rds On):6V, 10V
- Vgs ( Max):±20V
