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In Stock: 55
MOQ : 1 PCS
Packaging :TO-247-3 Tube
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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Total : $ 0.00
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- Category:Discrete Semiconductor Devices/Insulated Gate Bipolar Transistors (IGBTs)
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Input Type:Standard
- Power - Max:192 W
- Supplier Device Package:TO-247-3
- Current - Collector ( Ic) ( Max):50 A
- Voltage - Collector Emitter Breakdown ( Max):1200 V
- Vce(on) ( Max) @ Vge, Ic:2.3V @ 15V, 25A
- Current - Collector Pulsed ( Icm):200 A
- Switching Energy:800µJ (off)
- Gate Charge:200 nC
- Td (on/off) @ 25° C:-/235ns
- Test Condition:600V, 25A, 10Ohm, 15V
- Base Product Number:NGTB25