Rochester Electronics IKZ50N65ES5XKSA1 technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - IGBTs - Single
Product Status:Active
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-4
Input Type:Standard
Power - Max:274 W
Supplier Device Package:PG-TO247-4
Reverse Recovery Time (trr):62 ns
Current - Collector ( Ic) ( Max):80 A
Voltage - Collector Emitter Breakdown ( Max):650 V
I G B T Type:Trench
Vce(on) ( Max) @ Vge, Ic:1.7V @ 15V, 50A
Current - Collector Pulsed ( Icm):200 A
Switching Energy:770µJ (on), 880µJ (off)
Gate Charge:120 nC
Td (on/off) @ 25° C:36ns/294ns
Test Condition:400V, 25A, 23.1Ohm, 15V
EU RoHS Status:ROHS3 Compliant
MSL Rating:Vendor omitted MSL Rating information
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.29.0095
China RoHS Status:Green Symbol: Green and environmentally friendly product
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IKZ50N65ES5XKSA1 Datasheet
