Rochester Electronics HGTP10N40F1D technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - IGBTs - Single
Product Status:Active
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Input Type:Standard
Power - Max:75 W
Supplier Device Package:TO-220
Reverse Recovery Time (trr):-
Current - Collector ( Ic) ( Max):12 A
Voltage - Collector Emitter Breakdown ( Max):400 V
I G B T Type:-
Vce(on) ( Max) @ Vge, Ic:2.5V @ 10V, 5A
Current - Collector Pulsed ( Icm):12 A
Switching Energy:-
Gate Charge:13.4 nC
Td (on/off) @ 25° C:-
Test Condition:-
EU RoHS Status:RoHS non-compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:Vendor omitted MSL Rating information
US ECCN:EAR99
HTS US:8541.29.0095
China RoHS Status:Green Symbol: Green and environmentally friendly product
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Q: What is the return or replacement process for HGTP10N40F1D?
A: Dasenic conducts Pre-Shipment Inspections (PSI) on all orders to ensure quality before shipment. Suppose there are issues such as quantity discrepancies, incorrect items, or visible defects (e.g., breakage or rust), and they are acknowledged by us. In that case, returns or replacements will be accepted under the following conditions:
- The defect must be reported within 365 days after delivery.
- The product must be unused and in its original, unopened packaging.
- Requesting Return Authorizations must be obtained.
For the return process:
- Please inform us within 365 days of receiving the product.
- Obtain Return Authorization from our team.
- Please refer to our After-Sale Matters for more detailed instructions.
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HGTP10N40F1D Datasheet
