Rochester Electronics HGTD3N60B3 technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - IGBTs - Single
Product Status:Active
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
Input Type:Standard
Power - Max:33.3 W
Supplier Device Package:I-PAK
Reverse Recovery Time (trr):16 ns
Current - Collector ( Ic) ( Max):7 A
Voltage - Collector Emitter Breakdown ( Max):600 V
I G B T Type:-
Vce(on) ( Max) @ Vge, Ic:2.1V @ 15V, 3.5A
Current - Collector Pulsed ( Icm):20 A
Switching Energy:66µJ (on), 88µJ (off)
Gate Charge:21 nC
Td (on/off) @ 25° C:18ns/105ns
Test Condition:480V, 3.5A, 82Ohm, 15V
EU RoHS Status:RoHS non-compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:Vendor omitted MSL Rating information
US ECCN:EAR99
HTS US:8541.29.0095
China RoHS Status:Green Symbol: Green and environmentally friendly product
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- The defect must be reported within 365 days after delivery.
- The product must be unused and in its original, unopened packaging.
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- Please inform us within 365 days of receiving the product.
- Obtain Return Authorization from our team.
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HGTD3N60B3 Datasheet
