Rochester Electronics HGT1S12N60B3 technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - IGBTs - Single
Product Status:Active
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
Input Type:Standard
Power - Max:104 W
Supplier Device Package:I2PAK (TO-262)
Reverse Recovery Time (trr):-
Current - Collector ( Ic) ( Max):27 A
Voltage - Collector Emitter Breakdown ( Max):600 V
I G B T Type:-
Vce(on) ( Max) @ Vge, Ic:2.1V @ 15V, 12A
Current - Collector Pulsed ( Icm):110 A
Switching Energy:304µJ (on), 250µJ (off)
Gate Charge:68 nC
Td (on/off) @ 25° C:26ns/150ns
Test Condition:480V, 12A, 25Ohm, 15V
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
US ECCN:EAR99
China RoHS Status:Green Symbol: Green and environmentally friendly product
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- The defect must be reported within 365 days after delivery.
- The product must be unused and in its original, unopened packaging.
- Requesting Return Authorizations must be obtained.
For the return process:
- Please inform us within 365 days of receiving the product.
- Obtain Return Authorization from our team.
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HGT1S12N60B3 Datasheet
