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Infineon Technologies IRGS4715DPBF
IGBT WITH RECOVERY DIODE
Manufacturer # :IRGS4715DPBF
Manufacturer :Infineon Technologies
Dasenic # :E4AC71-DS
Datasheet :
IRGS4715DPBF Datasheet
IRGS4715DPBF DatasheetSample :
Customer # :
Description : IGBT WITH RECOVERY DIODE TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.125000 | $ 1.13 |
| 25+ | $ 1.107000 | $ 27.68 |
| 100+ | $ 1.062000 | $ 106.2 |
| 500+ | $ 1.017000 | $ 508.5 |
| 1000+ | $ 0.963000 | $ 963 |
In Stock: 6600
MOQ :1 PCS
Packaging :TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 1.125
Total :$ 1.13
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Insulated Gate Bipolar Transistors (IGBTs)
- Product Status:Obsolete
- Operating Temperature:-40°C ~ 175°C (TJ)
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Input Type:Standard
- Power - Max:100 W
- Supplier Device Package:D²PAK
- Reverse Recovery Time (trr):86 ns
- Current - Collector ( Ic) ( Max):21 A
- Voltage - Collector Emitter Breakdown ( Max):650 V
- Vce(on) ( Max) @ Vge, Ic:2V @ 15V, 8A
- Current - Collector Pulsed ( Icm):24 A
- Switching Energy:200µJ (on), 90µJ (off)
- Gate Charge:30 nC
- Td (on/off) @ 25° C:30ns/100ns
- Test Condition:400V, 8A, 50Ohm, 15V
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