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Infineon Technologies IRGIB4620DPBF
IGBT WITH RECOVERY DIODE
IRGIB4620DPBF Datasheet| Quantity | Unit Price | Total |
| 1+ | $ 3.000000 | $ 3 |
| 25+ | $ 2.940000 | $ 73.5 |
| 100+ | $ 2.820000 | $ 282 |
| 500+ | $ 2.700000 | $ 1350 |
| 1000+ | $ 2.560000 | $ 2560 |
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- Category:Discrete Semiconductor Devices/Insulated Gate Bipolar Transistors (IGBTs)
- Product Status:Obsolete
- Operating Temperature:-40°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3 Full Pack
- Input Type:Standard
- Power - Max:140 W
- Supplier Device Package:PG-TO220 Full Pack
- Reverse Recovery Time (trr):68 ns
- Current - Collector ( Ic) ( Max):32 A
- Voltage - Collector Emitter Breakdown ( Max):600 V
- I G B T Type:NPT
- Vce(on) ( Max) @ Vge, Ic:1.85V @ 15V, 12A
- Current - Collector Pulsed ( Icm):36 A
- Switching Energy:185µJ (on), 355µJ (off)
- Gate Charge:25 nC
- Td (on/off) @ 25° C:31ns/83ns
- Test Condition:400V, 12A, 22Ohm, 15V
- Packaging:Tube
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