Goford Semiconductor GT110N06S technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SOP
Power Dissipation ( Max):3.1W (Tc)
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):60 V
Current - Continuous Drain ( Id) @ 25° C:14A (Tc)
Rds On ( Max) @ Id, Vgs:11mOhm @ 14A, 10V
Vgs(th) ( Max) @ Id:2.4V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs:24 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds:1300 pF @ 25 V
Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
Vgs ( Max):±20V
MSL Rating:3 (168 Hours,30°C/60%RH)
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.29.0095
EU RoHS Status:RoHS Compliant
China RoHS Status:Green Symbol: Green and environmentally friendly product
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GT110N06S Datasheet
