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Goford Semiconductor G06NP06S2
Manufacturer # :G06NP06S2
Manufacturer :Goford Semiconductor
Dasenic # :G06NP06S2-DS
Datasheet : G06NP06S2 Datasheet
Customer # :
Description : N/P60V,RD(MAX)<35M@10V,RD(MAX)<4
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In Stock: 19200
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.3548
Total :$ 0.35
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G06NP06S2 information
Goford Semiconductor G06NP06S2 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Power - Max:2W (Tc), 2.5W (Tc)
- Supplier Device Package:8-SOP
- F E T Type:N and P-Channel
- F E T Feature:Standard
- Drain to Source Voltage ( Vdss):60V
- Current - Continuous Drain ( Id) @ 25° C:6A (Tc)
- Rds On ( Max) @ Id, Vgs:35mOhm @ 6A, 10V, 45mOhm @ 5A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA, 3.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:22nC @ 10V, 25nC @ 10V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:3 (168 Hours,30°C/60%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
G06NP06S2 provided by Goford Semiconductor
Since the foundation in 1995, Goford Semiconductor has been developing into a global company with offices in USA,
Hong Kong, Australia, Shenzhen and Jiangsu .
We have been always devoting in the R&D and sales of the power Mosfets products.
We focus on the energy efficiency, mobility and reliability to provide cost effective products to the market.
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