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Goford Semiconductor GT090N06D52

In Stock: 15000
MOQ: 1
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Goford Semiconductor GT090N06D52 technical specifications, attributes, parameters.

Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
Product Status:Active
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Power - Max:62W (Tc)
Supplier Device Package:8-DFN (4.9x5.75)
F E T Type:2 N-Channel (Dual)
F E T Feature:Standard
Drain to Source Voltage ( Vdss):60V
Current - Continuous Drain ( Id) @ 25° C:40A (Tc)
Rds On ( Max) @ Id, Vgs:9mOhm @ 14A, 10V
Vgs(th) ( Max) @ Id:2.4V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs:24nC @ 10V
Input Capacitance ( Ciss) ( Max) @ Vds:1620pF @ 30V
EU RoHS Status:ROHS3 Compliant
MSL Rating:3 (168 Hours,30°C/60%RH)
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.29.0095
China RoHS Status:Green Symbol: Green and environmentally friendly product
GT090N06D52 provided by Goford Semiconductor
Since the foundation in 1995, Goford Semiconductor has been developing into a global company with offices in USA, Hong Kong, Australia, Shenzhen and Jiangsu . We have been always devoting in the R&D and sales of the power Mosfets products. We focus on the energy efficiency, mobility and reliability to provide cost effective products to the market.

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Ratings and Reviews
Great Product

John D.

Excellent product quality and fast shipping service. Will definitely purchase again!

Good Experience

Sarah M.

Smooth transaction process and responsive customer support. Highly recommended!

Satisfied

Mike R.

Accurate product description and arrived earlier than expected.

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