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Goford Semiconductor GT090N06D52
Manufacturer # :GT090N06D52
Manufacturer :Goford Semiconductor
Dasenic # :GT090N06D52-DS
Datasheet : GT090N06D52 Datasheet
Customer # :
Description : N60V,RD(MAX)<9M@10V,RD(MAX)<13M@
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In Stock: 15000
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.6626
Total :$ 0.66
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GT090N06D52 information
Goford Semiconductor GT090N06D52 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-PowerTDFN
- Power - Max:62W (Tc)
- Supplier Device Package:8-DFN (4.9x5.75)
- F E T Type:2 N-Channel (Dual)
- F E T Feature:Standard
- Drain to Source Voltage ( Vdss):60V
- Current - Continuous Drain ( Id) @ 25° C:40A (Tc)
- Rds On ( Max) @ Id, Vgs:9mOhm @ 14A, 10V
- Vgs(th) ( Max) @ Id:2.4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:24nC @ 10V
- Input Capacitance ( Ciss) ( Max) @ Vds:1620pF @ 30V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:3 (168 Hours,30°C/60%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
GT090N06D52 provided by Goford Semiconductor
Since the foundation in 1995, Goford Semiconductor has been developing into a global company with offices in USA,
Hong Kong, Australia, Shenzhen and Jiangsu .
We have been always devoting in the R&D and sales of the power Mosfets products.
We focus on the energy efficiency, mobility and reliability to provide cost effective products to the market.
Goford Semiconductor Related product recommendations
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