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Goford Semiconductor 18N10

N100V,RD(MAX)<53M@10V,RD(MAX)<63
part number has RoHS
Manufacturer # :18N10
Manufacturer :Goford Semiconductor
Dasenic # :18N10-DS
Datasheet :pdf download 18N10 Datasheet
Customer # :
Description : N100V,RD(MAX)<53M@10V,RD(MAX)<63
Pricing (USD) : *To apply for a price, please click the Send Target Price button
QuantityUnit PriceTotal
10+$ 0.2948$ 2.95
2500+$ 0.1638$ 409.5
15000+$ 0.1512$ 2268
30000+$ 0.1359$ 4077
In Stock: 14086
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.2948
Total :$ 0.29
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18N10 information

  • Goford Semiconductor 18N10 technical specifications, attributes, parameters.
  • Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
  • Product Status:Active
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Technology:-
  • Supplier Device Package:-
  • Power Dissipation ( Max):-
  • F E T Type:-
  • F E T Feature:-
  • Drain to Source Voltage ( Vdss):-
  • Current - Continuous Drain ( Id) @ 25° C:-
  • Rds On ( Max) @ Id, Vgs:-
  • Vgs(th) ( Max) @ Id:-
  • Gate Charge ( Qg) ( Max) @ Vgs:-
  • Input Capacitance ( Ciss) ( Max) @ Vds:-
  • Drive Voltage ( Max Rds On, Min Rds On):-
  • Vgs ( Max):-
  • EU RoHS Status:ROHS3 Compliant
  • MSL Rating:3 (168 Hours,30°C/60%RH)
  • REACH Status:REACH Unaffected
  • US ECCN:EAR99
  • HTS US:8541.29.0095
  • China RoHS Status:Green Symbol: Green and environmentally friendly product
18N10 provided by Goford Semiconductor
Since the foundation in 1995, Goford Semiconductor has been developing into a global company with offices in USA, Hong Kong, Australia, Shenzhen and Jiangsu . We have been always devoting in the R&D and sales of the power Mosfets products. We focus on the energy efficiency, mobility and reliability to provide cost effective products to the market.
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