Goford Semiconductor G4616 technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
Product Status:Active
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Power - Max:2W (Tc), 2.8W (Tc)
Supplier Device Package:8-SOP
F E T Type:N and P-Channel Complementary
F E T Feature:Standard
Drain to Source Voltage ( Vdss):40V
Current - Continuous Drain ( Id) @ 25° C:8A (Tc), 7A (Tc)
Rds On ( Max) @ Id, Vgs:20mOhm @ 8A, 10V, 35mOhm @ 7A, 10V
Vgs(th) ( Max) @ Id:2.5V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs:12nC @ 10V, 13nC @ 10V
Input Capacitance ( Ciss) ( Max) @ Vds:415pF @ 20V, 520pF @ 20V
EU RoHS Status:ROHS3 Compliant
MSL Rating:3 (168 Hours,30°C/60%RH)
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.29.0095
China RoHS Status:Green Symbol: Green and environmentally friendly product
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G4616 Datasheet
