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Goford Semiconductor GT100N12T
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
Manufacturer # :GT100N12T
Manufacturer :Goford Semiconductor
Dasenic # :GT100N12T-DS
Datasheet :
GT100N12T Datasheet
GT100N12T DatasheetCustomer # :
Description : N120V,RD(MAX)<10M@10V,VTH2.5V~3.
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| Quantity | Unit Price | Total |
| 150+ | $ 0.5202 | $ 78.03 |
| 15000+ | $ 0.4806 | $ 7209 |
| 30000+ | $ 0.4320 | $ 12960 |
In Stock: 9000
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.5202
Total :$ 0.52
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GT100N12T information
Goford Semiconductor GT100N12T technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-220
- Power Dissipation ( Max):120W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):120 V
- Current - Continuous Drain ( Id) @ 25° C:70A (Tc)
- Rds On ( Max) @ Id, Vgs:10mOhm @ 35A, 10V
- Vgs(th) ( Max) @ Id:3.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:50 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:3050 pF @ 60 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
GT100N12T provided by Goford Semiconductor
Since the foundation in 1995, Goford Semiconductor has been developing into a global company with offices in USA,
Hong Kong, Australia, Shenzhen and Jiangsu .
We have been always devoting in the R&D and sales of the power Mosfets products.
We focus on the energy efficiency, mobility and reliability to provide cost effective products to the market.
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