Name: GC20N65F
Brand: Goford Semiconductor
SKU: DS-6152368
Price: 1.2384 USD
Availability: InStock
Rating: 4.8 (3 reviews)

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Goford Semiconductor GC20N65F

N650V,RD(MAX)<170M@10V,VTH2.5V~4

Manufacturer # :GC20N65F

Manufacturer :Goford Semiconductor

Dasenic # :GC20N65F-DS

Datasheet :

GC20N65F Datasheet

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Description : N650V,RD(MAX)<170M@10V,VTH2.5V~4

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Quantity	Unit Price	Total
100+	$ 1.2384	$ 123.84
15000+	$ 1.1430	$ 17145
30000+	$ 1.0287	$ 30861

In Stock: 38049

MOQ :1 PCS

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Unit Price :$ 1.2384

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GC20N65F information

Goford Semiconductor GC20N65F technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3 Full Pack
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220F
Power Dissipation ( Max):34W (Tc)
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):650 V
Current - Continuous Drain ( Id) @ 25° C:20A (Tc)
Rds On ( Max) @ Id, Vgs:170mOhm @ 10A, 10V
Vgs(th) ( Max) @ Id:4.5V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs:39 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds:1724 pF @ 100 V
Drive Voltage ( Max Rds On, Min Rds On):10V
Vgs ( Max):±30V
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
US ECCN:EAR99
China RoHS Status:Green Symbol: Green and environmentally friendly product

Download datasheets and manufacturer documentation for Goford Semiconductor GC20N65F
Datasheet:
GC20N65F,

Goford Semiconductor GC20N65F Environmental and export classification status description

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GC20N65F provided by Goford Semiconductor

Since the foundation in 1995, Goford Semiconductor has been developing into a global company with offices in USA, Hong Kong, Australia, Shenzhen and Jiangsu . We have been always devoting in the R&D and sales of the power Mosfets products. We focus on the energy efficiency, mobility and reliability to provide cost effective products to the market.