Goford Semiconductor GC11N65F
in_stock: 24000
MOQ: 1
3 Price Tiers
- Manufacturer_part :GC11N65F
- Manufacturer :Goford Semiconductor
- Dasenic_Part :GC11N65F-DS
- Datasheet : GC11N65F Datasheet PDF
- Description : N650V,RD(MAX)<360M@10V,VTH2.5V~4
- package :-
- unit_price: $0.7137total: $0.71
Quantity | unit_price | You Save |
---|---|---|
1-100 | $0.7137 | - |
101-15000 | $0.6588 | 7.7% save |
15001-30000 | $0.5931 | 16.9% save |
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Goford Semiconductor GC11N65F technical_specifications
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:-
Mounting Type:-
Package / Case:-
Technology:-
Supplier Device Package:-
Power Dissipation ( Max):-
F E T Type:-
F E T Feature:-
Drain to Source Voltage ( Vdss):-
Current - Continuous Drain ( Id) @ 25° C:-
Rds On ( Max) @ Id, Vgs:-
Vgs(th) ( Max) @ Id:-
Gate Charge ( Qg) ( Max) @ Vgs:-
Input Capacitance ( Ciss) ( Max) @ Vds:-
Drive Voltage ( Max Rds On, Min Rds On):-
Vgs ( Max):-
EU RoHS Status:ROHS3 Compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.29.0095
China RoHS Status:Green Symbol: Green and environmentally friendly product
GC11N65F provided by Goford Semiconductor
Since the foundation in 1995, Goford Semiconductor has been developing into a global company with offices in USA,
Hong Kong, Australia, Shenzhen and Jiangsu .
We have been always devoting in the R&D and sales of the power Mosfets products.
We focus on the energy efficiency, mobility and reliability to provide cost effective products to the market.
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Ratings and Reviews
Great Product
John D.
Excellent product quality and fast shipping service. Will definitely purchase again!
Good Experience
Sarah M.
Smooth transaction process and responsive customer support. Highly recommended!
Satisfied
Mike R.
Accurate product description and arrived earlier than expected.
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