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Goford Semiconductor G7P03S
P30V,RD(MAX)<22M@-10V,RD(MAX)<33
Manufacturer # :G7P03S
Manufacturer :Goford Semiconductor
Dasenic # :G7P03S-DS
Datasheet :
G7P03S Datasheet
G7P03S DatasheetCustomer # :
Description : P30V,RD(MAX)<22M@-10V,RD(MAX)<33
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.1636 | $ 1.64 |
| 4000+ | $ 0.0909 | $ 363.6 |
| 16000+ | $ 0.0855 | $ 1368 |
| 32000+ | $ 0.0801 | $ 2563.2 |
In Stock: 9600
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.1636
Total :$ 0.16
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G7P03S information
Goford Semiconductor G7P03S technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-SOP
- Power Dissipation ( Max):2.7W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:9A (Tc)
- Rds On ( Max) @ Id, Vgs:22mOhm @ 3A, 10V
- Vgs(th) ( Max) @ Id:2V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:24.5 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1253 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:3 (168 Hours,30°C/60%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
G7P03S provided by Goford Semiconductor
Since the foundation in 1995, Goford Semiconductor has been developing into a global company with offices in USA,
Hong Kong, Australia, Shenzhen and Jiangsu .
We have been always devoting in the R&D and sales of the power Mosfets products.
We focus on the energy efficiency, mobility and reliability to provide cost effective products to the market.
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