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Goford Semiconductor G65P06D5
P60V,RD(MAX)<18M@-10V,VTH-2V~-3V
Manufacturer # :G65P06D5
Manufacturer :Goford Semiconductor
Dasenic # :G65P06D5-DS
Datasheet :
G65P06D5 Datasheet
G65P06D5 DatasheetCustomer # :
Description : P60V,RD(MAX)<18M@-10V,VTH-2V~-3V
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| Quantity | Unit Price | Total |
| 10+ | $ 0.6075 | $ 6.08 |
| 5000+ | $ 0.3375 | $ 1687.5 |
| 15000+ | $ 0.3114 | $ 4671 |
| 30000+ | $ 0.2808 | $ 8424 |
In Stock: 31983
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.6075
Total :$ 0.61
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G65P06D5 information
Goford Semiconductor G65P06D5 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-PowerTDFN
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-DFN (4.9x5.75)
- Power Dissipation ( Max):130W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):60 V
- Current - Continuous Drain ( Id) @ 25° C:60A (Tc)
- Rds On ( Max) @ Id, Vgs:18mOhm @ 20A, 10V
- Vgs(th) ( Max) @ Id:3.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:75 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:5814 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:3 (168 Hours,30°C/60%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
G65P06D5 provided by Goford Semiconductor
Since the foundation in 1995, Goford Semiconductor has been developing into a global company with offices in USA,
Hong Kong, Australia, Shenzhen and Jiangsu .
We have been always devoting in the R&D and sales of the power Mosfets products.
We focus on the energy efficiency, mobility and reliability to provide cost effective products to the market.
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