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Goford Semiconductor G60N10T

N100V,RD(MAX)<25M@10V,RD(MAX)<30
part number has RoHS
Manufacturer # :G60N10T
Manufacturer :Goford Semiconductor
Dasenic # :G60N10T-DS
Customer # :
Description : N100V,RD(MAX)<25M@10V,RD(MAX)<30
Pricing (USD) : *To apply for a price, please click the Send Target Price button
QuantityUnit PriceTotal
200+$ 0.3969$ 79.38
15000+$ 0.3663$ 5494.5
30000+$ 0.3303$ 9909
In Stock: 12000
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.3969
Total :$ 0.40
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G60N10T information

  • Goford Semiconductor G60N10T technical specifications, attributes, parameters.
  • Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
  • Product Status:Active
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Technology:MOSFET (Metal Oxide)
  • Supplier Device Package:TO-220
  • Power Dissipation ( Max):160W (Tc)
  • F E T Type:N-Channel
  • F E T Feature:-
  • Drain to Source Voltage ( Vdss):100 V
  • Current - Continuous Drain ( Id) @ 25° C:60A (Tc)
  • Rds On ( Max) @ Id, Vgs:25mOhm @ 20A, 10V
  • Vgs(th) ( Max) @ Id:2.5V @ 250µA
  • Gate Charge ( Qg) ( Max) @ Vgs:146 nC @ 10 V
  • Input Capacitance ( Ciss) ( Max) @ Vds:3970 pF @ 50 V
  • Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
  • Vgs ( Max):±20V
  • EU RoHS Status:RoHS Compliant
  • REACH Status:REACH is not affected
  • US ECCN:EAR99
  • China RoHS Status:Green Symbol: Green and environmentally friendly product
G60N10T provided by Goford Semiconductor
Since the foundation in 1995, Goford Semiconductor has been developing into a global company with offices in USA, Hong Kong, Australia, Shenzhen and Jiangsu . We have been always devoting in the R&D and sales of the power Mosfets products. We focus on the energy efficiency, mobility and reliability to provide cost effective products to the market.
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