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Goford Semiconductor G50N03J
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
Manufacturer # :G50N03J
Manufacturer :Goford Semiconductor
Dasenic # :G50N03J-DS
Datasheet :
G50N03J Datasheet
G50N03J DatasheetCustomer # :
Description : N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
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| Quantity | Unit Price | Total |
| 10+ | $ 0.1566 | $ 1.57 |
| 525+ | $ 0.1305 | $ 68.51 |
| 15000+ | $ 0.1206 | $ 1809 |
| 30000+ | $ 0.1080 | $ 3240 |
In Stock: 8370
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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Unit Price :$ 0.1566
Total :$ 0.16
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G50N03J information
Goford Semiconductor G50N03J technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-251-3 Stub Leads, IPak
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-251
- Power Dissipation ( Max):48W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:65A (Tc)
- Rds On ( Max) @ Id, Vgs:7mOhm @ 20A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:16.6 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1255 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
G50N03J provided by Goford Semiconductor
Since the foundation in 1995, Goford Semiconductor has been developing into a global company with offices in USA,
Hong Kong, Australia, Shenzhen and Jiangsu .
We have been always devoting in the R&D and sales of the power Mosfets products.
We focus on the energy efficiency, mobility and reliability to provide cost effective products to the market.
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