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Goford Semiconductor G50N03J

In Stock: 31140
MOQ: 1
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Goford Semiconductor G50N03J technical specifications, attributes, parameters.

Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-251-3 Stub Leads, IPak
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-251
Power Dissipation ( Max):48W (Tc)
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):30 V
Current - Continuous Drain ( Id) @ 25° C:65A (Tc)
Rds On ( Max) @ Id, Vgs:7mOhm @ 20A, 10V
Vgs(th) ( Max) @ Id:2.5V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs:16.6 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds:1255 pF @ 15 V
Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
Vgs ( Max):±20V
EU RoHS Status:ROHS3 Compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.29.0095
China RoHS Status:Green Symbol: Green and environmentally friendly product
G50N03J provided by Goford Semiconductor
Since the foundation in 1995, Goford Semiconductor has been developing into a global company with offices in USA, Hong Kong, Australia, Shenzhen and Jiangsu . We have been always devoting in the R&D and sales of the power Mosfets products. We focus on the energy efficiency, mobility and reliability to provide cost effective products to the market.

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Ratings and Reviews
Great Product

John D.

Excellent product quality and fast shipping service. Will definitely purchase again!

Good Experience

Sarah M.

Smooth transaction process and responsive customer support. Highly recommended!

Satisfied

Mike R.

Accurate product description and arrived earlier than expected.

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