Goford Semiconductor G3035 technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SOT-23-3
Power Dissipation ( Max):1.4W (Tc)
F E T Type:P-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):30 V
Current - Continuous Drain ( Id) @ 25° C:4.6A (Tc)
Rds On ( Max) @ Id, Vgs:59mOhm @ 4A, 10V
Vgs(th) ( Max) @ Id:2V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs:13 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds:650 pF @ 15 V
Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
Vgs ( Max):±20V
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
US ECCN:EAR99
China RoHS Status:Green Symbol: Green and environmentally friendly product
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G3035 Datasheet
