Goford Semiconductor G3035
in_stock: 25758
MOQ: 1
4 Price Tiers
- Manufacturer_part :G3035
- Manufacturer :Goford Semiconductor
- Dasenic_Part :G3035-DS
- Datasheet : G3035 Datasheet PDF
- Description : P30V,RD(MAX)<59M@-10V,RD(MAX)<75
- package :-
- unit_price: $0.0599total: $0.06
| Quantity | unit_price | You Save |
|---|---|---|
| 1-10 | $0.0599 | - |
| 11-3000 | $0.0333 | 44.4% save |
| 3001-15000 | $0.0306 | 48.9% save |
| 15001-30000 | $0.0279 | 53.4% save |
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Goford Semiconductor G3035 technical_specifications
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SOT-23-3
Power Dissipation ( Max):1.4W (Tc)
F E T Type:P-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):30 V
Current - Continuous Drain ( Id) @ 25° C:4.6A (Tc)
Rds On ( Max) @ Id, Vgs:59mOhm @ 4A, 10V
Vgs(th) ( Max) @ Id:2V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs:13 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds:650 pF @ 15 V
Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
Vgs ( Max):±20V
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
US ECCN:EAR99
China RoHS Status:Green Symbol: Green and environmentally friendly product
G3035 provided by Goford Semiconductor
Since the foundation in 1995, Goford Semiconductor has been developing into a global company with offices in USA,
Hong Kong, Australia, Shenzhen and Jiangsu .
We have been always devoting in the R&D and sales of the power Mosfets products.
We focus on the energy efficiency, mobility and reliability to provide cost effective products to the market.
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Ratings and Reviews
Great Product
John D.
Excellent product quality and fast shipping service. Will definitely purchase again!
Good Experience
Sarah M.
Smooth transaction process and responsive customer support. Highly recommended!
Satisfied
Mike R.
Accurate product description and arrived earlier than expected.
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