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Goford Semiconductor G110N06K
N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
Manufacturer # :G110N06K
Manufacturer :Goford Semiconductor
Dasenic # :G110N06K-DS
Datasheet :
G110N06K Datasheet
G110N06K DatasheetCustomer # :
Description : N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
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| Quantity | Unit Price | Total |
| 10+ | $ 0.5864 | $ 5.86 |
| 2500+ | $ 0.3258 | $ 814.5 |
| 15000+ | $ 0.3006 | $ 4509 |
| 30000+ | $ 0.2709 | $ 8127 |
In Stock: 48000
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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Unit Price :$ 0.5864
Total :$ 0.59
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G110N06K information
Goford Semiconductor G110N06K technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-252
- Power Dissipation ( Max):160W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):60 V
- Current - Continuous Drain ( Id) @ 25° C:110A (Tc)
- Rds On ( Max) @ Id, Vgs:6.4mOhm @ 4A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:113 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:5538 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:3 (168 Hours,30°C/60%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
G110N06K provided by Goford Semiconductor
Since the foundation in 1995, Goford Semiconductor has been developing into a global company with offices in USA,
Hong Kong, Australia, Shenzhen and Jiangsu .
We have been always devoting in the R&D and sales of the power Mosfets products.
We focus on the energy efficiency, mobility and reliability to provide cost effective products to the market.
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