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Goford Semiconductor G05P06L
Manufacturer # :G05P06L
Manufacturer :Goford Semiconductor
Dasenic # :G05P06L-DS
Datasheet : G05P06L Datasheet
Customer # :
Description : P60V,RD(MAX)<120M@-10V,RD(MAX)<1
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In Stock: 40242
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.1361
Total :$ 0.14
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Goford Semiconductor G05P06L technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SOT-23-3
- Power Dissipation ( Max):4.3W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):60 V
- Current - Continuous Drain ( Id) @ 25° C:5A (Tc)
- Rds On ( Max) @ Id, Vgs:120mOhm @ 4A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:37 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1366 pF @ 50 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- MSL Rating:3 (168 Hours,30°C/60%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- EU RoHS Status:RoHS Compliant
- China RoHS Status:Green Symbol: Green and environmentally friendly product
G05P06L provided by Goford Semiconductor
Since the foundation in 1995, Goford Semiconductor has been developing into a global company with offices in USA,
Hong Kong, Australia, Shenzhen and Jiangsu .
We have been always devoting in the R&D and sales of the power Mosfets products.
We focus on the energy efficiency, mobility and reliability to provide cost effective products to the market.
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