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Goford Semiconductor 3415A

In Stock: 10800
MOQ: 1
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Goford Semiconductor 3415A technical specifications, attributes, parameters.

Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SOT-23-3
Power Dissipation ( Max):1.4W (Ta)
F E T Type:P-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):20 V
Current - Continuous Drain ( Id) @ 25° C:4.6A (Ta)
Rds On ( Max) @ Id, Vgs:45mOhm @ 4A, 4.5V
Vgs(th) ( Max) @ Id:900mV @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs:12 nC @ 4.5 V
Input Capacitance ( Ciss) ( Max) @ Vds:950 pF @ 10 V
Drive Voltage ( Max Rds On, Min Rds On):2.5V, 4.5V
Vgs ( Max):±10V
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
US ECCN:EAR99
China RoHS Status:Green Symbol: Green and environmentally friendly product
3415A provided by Goford Semiconductor
Since the foundation in 1995, Goford Semiconductor has been developing into a global company with offices in USA, Hong Kong, Australia, Shenzhen and Jiangsu . We have been always devoting in the R&D and sales of the power Mosfets products. We focus on the energy efficiency, mobility and reliability to provide cost effective products to the market.

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Ratings and Reviews
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Excellent product quality and fast shipping service. Will definitely purchase again!

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Accurate product description and arrived earlier than expected.

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