Rochester Electronics IRGP4266D-EPBF technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - IGBTs - Single
Product Status:Obsolete
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Input Type:Standard
Power - Max:455 W
Supplier Device Package:TO-247AD
Reverse Recovery Time (trr):170 ns
Current - Collector ( Ic) ( Max):140 A
Voltage - Collector Emitter Breakdown ( Max):650 V
I G B T Type:-
Vce(on) ( Max) @ Vge, Ic:2.1V @ 15V, 75A
Current - Collector Pulsed ( Icm):300 A
Switching Energy:2.5mJ (on), 2.2mJ (off)
Gate Charge:210 nC
Td (on/off) @ 25° C:50ns/200ns
Test Condition:400V, 75A, 10Ohm, 15V
EU RoHS Status:RoHS Compliant
REACH Status:Vendor is not defined
US ECCN:Provided as per user requirements
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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- The defect must be reported within 365 days after delivery.
- The product must be unused and in its original, unopened packaging.
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IRGP4266D-EPBF Datasheet
