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Transphorm TPH3208PS
GANFET N-CH 650V 20A TO220AB
Manufacturer # :TPH3208PS
Manufacturer :Transphorm
Dasenic # :TPH3208PS-DS
Datasheet :
TPH3208PS Datasheet
TPH3208PS DatasheetCustomer # :
Description : GANFET N-CH 650V 20A TO220AB
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 8.3336 | $ 8.33 |
| 10+ | $ 7.8619 | $ 78.62 |
| 100+ | $ 7.4169 | $ 741.69 |
| 1000+ | $ 6.6010 | $ 6601 |
In Stock: 7412
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 8.3336
Total :$ 8.33
Delivery :
Payment :
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TPH3208PS information
Transphorm TPH3208PS technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3
- Technology:GaNFET (Cascode Gallium Nitride FET)
- Supplier Device Package:TO-220AB
- Power Dissipation ( Max):96W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):650 V
- Current - Continuous Drain ( Id) @ 25° C:20A (Tc)
- Rds On ( Max) @ Id, Vgs:130mOhm @ 13A, 8V
- Vgs(th) ( Max) @ Id:2.6V @ 300µA
- Gate Charge ( Qg) ( Max) @ Vgs:14 nC @ 8 V
- Input Capacitance ( Ciss) ( Max) @ Vds:760 pF @ 400 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±18V
- EU RoHS Status:RoHS Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:Vendor is not defined
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
TPH3208PS provided by Transphorm
Founded in 2007, Transphorm is a global semiconductor company, leading the GaN Revolution with the highest performance, highest reliability GaN devices for high voltage power conversion applications. To ensure this, Transphorm deploys its unique vertically-integrated business approach that leverages the industry’s most experienced GaN engineering team at every development stage: design, fabrication, device and application support. This approach, backed by one of the industry’s largest IP portfolios with over 1000 patents, has yielded the industry’s only JEDEC- and AEC-Q101-qualified GaN FETs. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost—and here’s how we do it.
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