Images are for reference only.
1 : $0.0000
First-time registration with orders over $2,000 receives a $100 coupon. Register Now !
Transphorm TP65H300G4LSG
- Mfr.Part # :TP65H300G4LSG
- Manufacturer :Transphorm
- Dasenic # :TP65H300G4LSG-DS
- Datasheet : TP65H300G4LSG Datasheet
- Description : GANFET N-CH 650V 6.5A 3PQFN
- Package :-
- Quantity :Unit Price : $ 0Total : $ 0.00
- Delivery Time :Ship Within 48 Hours
- Shipping Origin :Shenzhen or Hong Kong Warehouse
- Delivery :
- Payment :
In Stock: 1265
( MOQ : 1 PCS )Pricing (USD) :
Request a Quote
Help you to save your cost and time
Strict quality inspection and Reliable package for goods
Fast Reliable delivery to save time
Provide 365 days warranty after-sales service
Transphorm TP65H300G4LSG technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:3-PowerDFN
Technology:GaNFET (Gallium Nitride)
Supplier Device Package:3-PQFN (8x8)
Power Dissipation ( Max):21W (Tc)
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):650 V
Current - Continuous Drain ( Id) @ 25° C:6.5A (Tc)
Rds On ( Max) @ Id, Vgs:312mOhm @ 5A, 8V
Vgs(th) ( Max) @ Id:2.6V @ 500µA
Gate Charge ( Qg) ( Max) @ Vgs:9.6 nC @ 8 V
Input Capacitance ( Ciss) ( Max) @ Vds:760 pF @ 400 V
Drive Voltage ( Max Rds On, Min Rds On):8V
Vgs ( Max):±18V
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
US ECCN:EAR99
China RoHS Status:Green Symbol: Green and environmentally friendly product
TP65H300G4LSG provided by Transphorm
Founded in 2007, Transphorm is a global semiconductor company, leading the GaN Revolution with the highest performance, highest reliability GaN devices for high voltage power conversion applications. To ensure this, Transphorm deploys its unique vertically-integrated business approach that leverages the industry’s most experienced GaN engineering team at every development stage: design, fabrication, device and application support. This approach, backed by one of the industry’s largest IP portfolios with over 1000 patents, has yielded the industry’s only JEDEC- and AEC-Q101-qualified GaN FETs. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost—and here’s how we do it.
Transphorm Related product recommendations
We can prompt fulfill customer requests for electronic components, even for scarce parts in the market.
TP65H300G4LSG Similar Products
Ratings and Reviews
Ratings
Please rate the product !
Please submit comments after logging into your account.