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Transphorm TPD3215M

In Stock: 44
MOQ: 1
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  • Mfr.Part # :TPD3215M
  • Manufacturer :Transphorm
  • Dasenic # :TPD3215M-DS
  • Datasheet : TPD3215M Datasheet PDF
  • Description : GANFET 2N-CH 600V 70A MODULE
  • Package :-
  • Unit Price: $0.0000
    Total: $0.01

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Transphorm TPD3215M technical specifications, attributes, parameters.

Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
Product Status:Obsolete
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:Module
Power - Max:470W
Supplier Device Package:Module
F E T Type:2 N-Channel (Half Bridge)
F E T Feature:GaNFET (Gallium Nitride)
Drain to Source Voltage ( Vdss):600V
Current - Continuous Drain ( Id) @ 25° C:70A (Tc)
Rds On ( Max) @ Id, Vgs:34mOhm @ 30A, 8V
Vgs(th) ( Max) @ Id:-
Gate Charge ( Qg) ( Max) @ Vgs:28nC @ 8V
Input Capacitance ( Ciss) ( Max) @ Vds:2260pF @ 100V
EU RoHS Status:RoHS Compliant
REACH Status:Vendor is not defined
US ECCN:Provided as per user requirements
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
TPD3215M provided by Transphorm
Founded in 2007, Transphorm is a global semiconductor company, leading the GaN Revolution with the highest performance, highest reliability GaN devices for high voltage power conversion applications. To ensure this, Transphorm deploys its unique vertically-integrated business approach that leverages the industry’s most experienced GaN engineering team at every development stage: design, fabrication, device and application support. This approach, backed by one of the industry’s largest IP portfolios with over 1000 patents, has yielded the industry’s only JEDEC- and AEC-Q101-qualified GaN FETs. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost—and here’s how we do it.

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Accurate product description and arrived earlier than expected.

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