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Transphorm TPD3215M
GANFET 2N-CH 600V 70A MODULE
Manufacturer # :TPD3215M
Manufacturer :Transphorm
Dasenic # :TPD3215M-DS
Datasheet :
TPD3215M Datasheet
TPD3215M DatasheetCustomer # :
Description : GANFET 2N-CH 600V 70A MODULE
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| Quantity | Unit Price | Total |
In Stock: 44
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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Unit Price :$ 0
Total :$ 0.00
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TPD3215M information
Transphorm TPD3215M technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
- Product Status:Obsolete
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:Module
- Power - Max:470W
- Supplier Device Package:Module
- F E T Type:2 N-Channel (Half Bridge)
- F E T Feature:GaNFET (Gallium Nitride)
- Drain to Source Voltage ( Vdss):600V
- Current - Continuous Drain ( Id) @ 25° C:70A (Tc)
- Rds On ( Max) @ Id, Vgs:34mOhm @ 30A, 8V
- Vgs(th) ( Max) @ Id:-
- Gate Charge ( Qg) ( Max) @ Vgs:28nC @ 8V
- Input Capacitance ( Ciss) ( Max) @ Vds:2260pF @ 100V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
TPD3215M provided by Transphorm
Founded in 2007, Transphorm is a global semiconductor company, leading the GaN Revolution with the highest performance, highest reliability GaN devices for high voltage power conversion applications. To ensure this, Transphorm deploys its unique vertically-integrated business approach that leverages the industry’s most experienced GaN engineering team at every development stage: design, fabrication, device and application support. This approach, backed by one of the industry’s largest IP portfolios with over 1000 patents, has yielded the industry’s only JEDEC- and AEC-Q101-qualified GaN FETs. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost—and here’s how we do it.
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