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Transphorm TPH3208PD

GANFET N-CH 650V 20A TO220AB
part number has RoHS
Manufacturer # :TPH3208PD
Manufacturer :Transphorm
Dasenic # :TPH3208PD-DS
Customer # :
Description : GANFET N-CH 650V 20A TO220AB
Pricing (USD) : *To apply for a price, please click the Send Target Price button
QuantityUnit PriceTotal
In Stock: 88
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0
Total :$ 0.00
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  • Transphorm TPH3208PD technical specifications, attributes, parameters.
  • Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
  • Product Status:Obsolete
  • Operating Temperature:-55°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Technology:GaNFET (Gallium Nitride)
  • Supplier Device Package:TO-220AB
  • Power Dissipation ( Max):96W (Tc)
  • F E T Type:N-Channel
  • F E T Feature:-
  • Drain to Source Voltage ( Vdss):650 V
  • Current - Continuous Drain ( Id) @ 25° C:20A (Tc)
  • Rds On ( Max) @ Id, Vgs:130mOhm @ 13A, 8V
  • Vgs(th) ( Max) @ Id:2.6V @ 300µA
  • Gate Charge ( Qg) ( Max) @ Vgs:14 nC @ 8 V
  • Input Capacitance ( Ciss) ( Max) @ Vds:760 pF @ 400 V
  • Drive Voltage ( Max Rds On, Min Rds On):10V
  • Vgs ( Max):±18V
  • MSL Rating:1 (Unlimited, 30°C/85%RH)
  • US ECCN:EAR99
  • HTS US:8541.29.0095
  • EU RoHS Status:RoHS Compliant
  • REACH Status:Vendor is not defined
  • China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
TPH3208PD provided by Transphorm
Founded in 2007, Transphorm is a global semiconductor company, leading the GaN Revolution with the highest performance, highest reliability GaN devices for high voltage power conversion applications. To ensure this, Transphorm deploys its unique vertically-integrated business approach that leverages the industry’s most experienced GaN engineering team at every development stage: design, fabrication, device and application support. This approach, backed by one of the industry’s largest IP portfolios with over 1000 patents, has yielded the industry’s only JEDEC- and AEC-Q101-qualified GaN FETs. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost—and here’s how we do it.
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