Images are for reference only.
1 : $0.0000
First-time registration with orders over $2,000 receives a $100 coupon. Register Now !
Transphorm TPH3208PD
Manufacturer # :TPH3208PD
Manufacturer :Transphorm
Dasenic # :TPH3208PD-DS
Datasheet : TPH3208PD Datasheet
Customer # :
Description : GANFET N-CH 650V 20A TO220AB
Pricing (USD) : *To apply for a price, please click the Send Target Price button
In Stock: 88
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0
Total :$ 0.00
Delivery :
Payment :
Help you to save your cost and time
Strict quality inspection and Reliable package for goods
Fast Reliable delivery to save time
Provide 365 days warranty after-sales service
Transphorm TPH3208PD technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C
- Mounting Type:Through Hole
- Package / Case:TO-220-3
- Technology:GaNFET (Gallium Nitride)
- Supplier Device Package:TO-220AB
- Power Dissipation ( Max):96W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):650 V
- Current - Continuous Drain ( Id) @ 25° C:20A (Tc)
- Rds On ( Max) @ Id, Vgs:130mOhm @ 13A, 8V
- Vgs(th) ( Max) @ Id:2.6V @ 300µA
- Gate Charge ( Qg) ( Max) @ Vgs:14 nC @ 8 V
- Input Capacitance ( Ciss) ( Max) @ Vds:760 pF @ 400 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±18V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
TPH3208PD provided by Transphorm
Founded in 2007, Transphorm is a global semiconductor company, leading the GaN Revolution with the highest performance, highest reliability GaN devices for high voltage power conversion applications. To ensure this, Transphorm deploys its unique vertically-integrated business approach that leverages the industry’s most experienced GaN engineering team at every development stage: design, fabrication, device and application support. This approach, backed by one of the industry’s largest IP portfolios with over 1000 patents, has yielded the industry’s only JEDEC- and AEC-Q101-qualified GaN FETs. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost—and here’s how we do it.
Transphorm Related product recommendations
We can prompt fulfill customer requests for electronic components, even for scarce parts in the market.
TPH3208PD Similar Products
Ratings and Reviews
Ratings
Please rate the product !
Please submit comments after logging into your account.