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Transphorm TPH3207WS
GANFET N-CH 650V 50A TO247-3
- Mfr.Part # :TPH3207WS
- Manufacturer :Transphorm
- Dasenic # :TPH3207WS-DS
- Datasheet :
TPH3207WS Datasheet
- Description : GANFET N-CH 650V 50A TO247-3
- Package :-
- Quantity :Unit Price : $ 0Total : $ 0.00
- Delivery Time :Ship Within 48 Hours
- Shipping Origin :Shenzhen or Hong Kong Warehouse
- Delivery :
- Payment :
In Stock: 52
( MOQ : 1 PCS )Pricing (USD) : * All prices are in USD
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Transphorm TPH3207WS technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Obsolete
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Technology:GaNFET (Gallium Nitride)
Supplier Device Package:TO-247-3
Power Dissipation ( Max):178W (Tc)
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):650 V
Current - Continuous Drain ( Id) @ 25° C:50A (Tc)
Rds On ( Max) @ Id, Vgs:41mOhm @ 32A, 8V
Vgs(th) ( Max) @ Id:2.65V @ 700µA
Gate Charge ( Qg) ( Max) @ Vgs:42 nC @ 8 V
Input Capacitance ( Ciss) ( Max) @ Vds:2197 pF @ 400 V
Drive Voltage ( Max Rds On, Min Rds On):10V
Vgs ( Max):±18V
EU RoHS Status:RoHS Compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
US ECCN:EAR99
HTS US:8541.29.0095
REACH Status:Vendor is not defined
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
TPH3207WS provided by Transphorm
Founded in 2007, Transphorm is a global semiconductor company, leading the GaN Revolution with the highest performance, highest reliability GaN devices for high voltage power conversion applications. To ensure this, Transphorm deploys its unique vertically-integrated business approach that leverages the industry’s most experienced GaN engineering team at every development stage: design, fabrication, device and application support. This approach, backed by one of the industry’s largest IP portfolios with over 1000 patents, has yielded the industry’s only JEDEC- and AEC-Q101-qualified GaN FETs. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost—and here’s how we do it.
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