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Transphorm TPH3206LDG-TR
GANFET N-CH 600V 17A 3PQFN
- Mfr.Part # :TPH3206LDG-TR
- Manufacturer :Transphorm
- Dasenic # :TPH3206LDG-TR-DS
- Datasheet :
TPH3206LDG-TR Datasheet
- Description : GANFET N-CH 600V 17A 3PQFN
- Package :-
- Quantity :Unit Price : $ 0Total : $ 0.00
- Delivery Time :Ship Within 48 Hours
- Shipping Origin :Shenzhen or Hong Kong Warehouse
- Delivery :
- Payment :
In Stock: 49
( MOQ : 1 PCS )Pricing (USD) : * All prices are in USD
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Transphorm TPH3206LDG-TR technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Obsolete
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:3-PowerDFN
Technology:GaNFET (Gallium Nitride)
Supplier Device Package:3-PQFN (8x8)
Power Dissipation ( Max):96W (Tc)
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):600 V
Current - Continuous Drain ( Id) @ 25° C:17A (Tc)
Rds On ( Max) @ Id, Vgs:180mOhm @ 11A, 8V
Vgs(th) ( Max) @ Id:2.6V @ 500µA
Gate Charge ( Qg) ( Max) @ Vgs:9.3 nC @ 4.5 V
Input Capacitance ( Ciss) ( Max) @ Vds:760 pF @ 480 V
Drive Voltage ( Max Rds On, Min Rds On):8V
Vgs ( Max):±18V
US ECCN:EAR99
HTS US:8541.29.0095
EU RoHS Status:RoHS Compliant
REACH Status:Vendor is not defined
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
TPH3206LDG-TR provided by Transphorm
Founded in 2007, Transphorm is a global semiconductor company, leading the GaN Revolution with the highest performance, highest reliability GaN devices for high voltage power conversion applications. To ensure this, Transphorm deploys its unique vertically-integrated business approach that leverages the industry’s most experienced GaN engineering team at every development stage: design, fabrication, device and application support. This approach, backed by one of the industry’s largest IP portfolios with over 1000 patents, has yielded the industry’s only JEDEC- and AEC-Q101-qualified GaN FETs. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost—and here’s how we do it.
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