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Transphorm TPH3205WSBQA
GANFET N-CH 650V 35A TO247-3
Manufacturer # :TPH3205WSBQA
Manufacturer :Transphorm
Dasenic # :TPH3205WSBQA-DS
Datasheet :
TPH3205WSBQA Datasheet
TPH3205WSBQA DatasheetCustomer # :
Description : GANFET N-CH 650V 35A TO247-3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 33.5714 | $ 335.71 |
| 540+ | $ 27.9762 | $ 15107.15 |
In Stock: 1892
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 33.5714
Total :$ 33.57
Delivery :
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TPH3205WSBQA information
Transphorm TPH3205WSBQA technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Not For New Designs
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Technology:GaNFET (Gallium Nitride)
- Supplier Device Package:TO-247-3
- Power Dissipation ( Max):125W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):650 V
- Current - Continuous Drain ( Id) @ 25° C:35A (Tc)
- Rds On ( Max) @ Id, Vgs:62mOhm @ 22A, 8V
- Vgs(th) ( Max) @ Id:2.6V @ 700µA
- Gate Charge ( Qg) ( Max) @ Vgs:42 nC @ 8 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2200 pF @ 400 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±18V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
TPH3205WSBQA provided by Transphorm
Founded in 2007, Transphorm is a global semiconductor company, leading the GaN Revolution with the highest performance, highest reliability GaN devices for high voltage power conversion applications. To ensure this, Transphorm deploys its unique vertically-integrated business approach that leverages the industry’s most experienced GaN engineering team at every development stage: design, fabrication, device and application support. This approach, backed by one of the industry’s largest IP portfolios with over 1000 patents, has yielded the industry’s only JEDEC- and AEC-Q101-qualified GaN FETs. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost—and here’s how we do it.
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